indium antimonide refining

indium antimonide refining

A thermal analysis of the horizontal zone refining of

2004-11-15  A thermal analysis of the horizontal zone refining of indium antimonide has been successfully carried out in the form of a parametric study to investigate the effect of heater and tube dimensions on molten zone length and energy input.

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A Thermal Analysis of the Horizontal Zone Refining of

2018-12-6  The multi-pass zone refining process equipment studied is illustrated in Figures 1 and 2. The semiconducting material, in this case Indium Antimonide (InSb), is placed inside a closed Quartz (SiO2) tube. Six heating elements are equally distributed along the length of the tube with a spacing of approximately 150 mm. The tube is 1480 mm

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A systematic study of zone refining of single crystal

A systematic study of zone refining of single crystal indium antimonide. J Mater Sci 1, 14–28 (1966). https://doi/10.1007/BF00549717. Download citation. Received: 06 October 1965. Issue Date: February 1966. DOI: https://doi/10.1007/BF00549717

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A thermal analysis of the horizontal zone refining of

2004-11-1  A thermal analysis of the horizontal zone refining of indium antimonide. Single crystals of semiconductors and optical materials are very important in the field of computer technology and communications. The properties of such crystalline materials significantly depend upon the quantity and the type of impurities contained in their structure.

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A Thermal Analysis of the Horizontal Zone Refining of

Results are presented from the associated parametric study accomplished through a three-dimensional pseudo-steady state simulation of the zone refining process for Indium Antimonide (InSb). The conclusions will be of value when optimising the operating efficiency of horizontal zone refining where the length of the molten zone is a significant factor.

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[PDF] A thermal analysis of the horizontal zone

Results are presented from the associated parametric study accomplished through a three-dimensional pseudo-steady-state simulation of the zone refining process for indium antimonide. The conclusions will be of value when optimizing the operating efficiency of horizontal zone refining where the length of the molten zone is a significant factor.

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Ion Beam Sputtered Indium Antimonide Thin Films

1995-1-1  A process combining ion beam sputtering and zone melt refining (ZMR) has been developed to deposit thin InSb films (~500-1000A) on LiNbO _3, Si, and 7059 glass. X-ray diffraction results indicate the InSb film's (111) orientation is along the normal direction of the surface. Auger electron spectroscopy (AES) analysis shows that the atomic ratio between In and Sb is near 1: 1.

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Getter evaporation of pure thin films of indium antimonide

2019-9-28  Getter ecaporation of pure thin films of indium antimonide 873 source temperature of 1100°C for the indium and 660-720°C for the antimony. The maximum substrate temperature that it was found possible to use was 490 "C. Above this

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Growth and Characterization of Antimony-Based

R. Krishnaswamy: Compounding, zone refining and crystal growing of Indium Antimonide, J. Indian Chem. Soc. LII, 60–63 (1975) Google Scholar 11.72. R.K. Bagai, G.L. Seth, W.N. Borle: Growth of high purity indium antimony crystals for infrared detectors, Indian J. Pure Appl. Phys. 21,

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Production of High Purity Metals: A Review on Zone

Amongst them resistance heating is most popularly used in zone refining of metals with low melting point, such as Cadmium [ 7] and Indium-Antimonide [ 37]. Through an

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Getter evaporation of pure thin films of indium antimonide

2019-9-28  Getter ecaporation of pure thin films of indium antimonide 873 source temperature of 1100°C for the indium and 660-720°C for the antimony.The maximum substrate temperature that it was found possible to use was 490 "C. Above this temperature, homogeneous films could not be formed at the rate of deposition used.

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Shell Deer Park Refining LP Deer Park Refinery East

2011-8-19  results from the Indium Antimonide (InSb) detector used in the other tests to a Mercury Cadmium Telluride (MCT) detector by obtaining CE data with the MCT detector under similar conditions used in testing with the InSb detector. 1.3 Testing Team SDP conducted the tests responsive to the Section 114 Request in cooperation with Deer Park

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Ion Beam Sputtered Indium Antimonide Thin Films

A process combining ion beam sputtering and zone melt refining (ZMR) has been developed to deposit thin InSb films (~500-1000A) on LiNbO _3, Si, and 7059 glass. X-ray diffraction results indicate the InSb film's (111) orientation is along the normal direction of the surface. Auger electron spectroscopy (AES) analysis shows that the atomic ratio between In and Sb is near 1: 1.

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四川维美可金属科技有限公司 matltech

Indium Antimonide (InSb) substrate is compound by high purity Indium and Antimony elements, mostly being used for meteorology civil applications. Polycrystalline and mono crystalline of InSb is available.

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Roussopoulos, G.S. and Rubini, P.A. (2004) A Thermal

Roussopoulos, G.S. and Rubini, P.A. (2004) A Thermal Analysis of the Horizontal Zone Refining of Indium Antimonide. Journal of Crystal Growth, 271, 333-340.

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Growth and Characterization of Antimony-Based

T.C. Harman: Effect of zone refining variables on the segregation of impurities in indium antimonide, J. Electrochem. Soc. 103,128–132 (1956) CrossRef Google Scholar

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A Thermal Analysis of the Horizontal Zone Refining of

Results are presented from the associated parametric study accomplished through a three-dimensional pseudo-steady state simulation of the zone refining process for Indium Antimonide (InSb). The conclusions will be of value when optimising the operating efficiency of horizontal zone refining where the length of the molten zone is a significant

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Journal of Materials Science Volume 1, issue 1

A systematic study of zone refining of single crystal indium antimonide Authors (first, second and last of 4) A. R. Murray; J. A. Baldrey; O. Jones; Content type: Papers; Published: 01 February 1966; Pages: 14

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Indium antimonide (InSb)1312-41-0 1312-41-0 Purity

2020-2-9  Indium Antimonide (InSb) Physical character: Atomic Weight: 236.578. Density : 5.78g/cm 3. Melt point : 525 ℃ CAS NO.:1312-41-0. Specification: High Purity Indium Antimonide: InSb-04 Grade 99.99. The content of Indium Antimonide is above 99.99%. The total content of Ag, Al, Cu, Fe, Mg, Ni, Pb, Sn Se, Ca & Zn is bellow 100 ppm; InSb-05

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Unlocking Opportunities

2016-8-17  refining plant in Montreal, which houses its hydrometallurgical operations. 5N Plus expands its facilities and acquires produces indium antimonide (InSb) and gallium antimonide (GaSb) substrates for high-sensitivity infrared detectors and thermal imaging cameras.

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Ion Beam Sputtered Indium Antimonide Thin Films

A process combining ion beam sputtering and zone melt refining (ZMR) has been developed to deposit thin InSb films (~500-1000A) on LiNbO _3, Si, and 7059 glass. X-ray diffraction results indicate the InSb film's (111) orientation is along the normal direction of the surface. Auger electron spectroscopy (AES) analysis shows that the atomic ratio between In and Sb is near 1: 1.

get price

Growth and Characterization of Antimony-Based

T.C. Harman: Effect of zone refining variables on the segregation of impurities in indium antimonide, J. Electrochem. Soc. 103,128–132 (1956) CrossRef Google Scholar

get price

Indium antimonide (InSb)1312-41-0 1312-41-0 Purity

2020-2-9  Indium Antimonide (InSb) Physical character: Atomic Weight: 236.578. Density : 5.78g/cm 3. Melt point : 525 ℃ CAS NO.:1312-41-0. Specification: High Purity Indium Antimonide: InSb-04 Grade 99.99. The content of Indium Antimonide is above 99.99%. The total content of Ag, Al, Cu, Fe, Mg, Ni, Pb, Sn Se, Ca & Zn is bellow 100 ppm; InSb-05

get price

Getter evaporation of pure thin films of indium antimonide

2019-9-28  Getter ecaporation of pure thin films of indium antimonide 873 source temperature of 1100°C for the indium and 660-720°C for the antimony.The maximum substrate temperature that it was found possible to use was 490 "C. Above this temperature, homogeneous films could not be formed at the rate of deposition used.

get price

China High Purity Indium manufacturers and suppliers

2021-6-23  High purity indium bar, ingot, button of 99.999%, 99.9999% and 99.99999% purity 5N 6N 7N by vacuum refining and crystal pulling purification is primarily used in the manufacturing of III-V compound semiconductors, Indium Antimonide InSb, Indium Phosphide InP, Indium Nitride InN, high purity alloys, ITO powder and target, electronic paste

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Unlocking Opportunities

2016-8-17  refining plant in Montreal, which houses its hydrometallurgical operations. 5N Plus expands its facilities and acquires produces indium antimonide (InSb) and gallium antimonide (GaSb) substrates for high-sensitivity infrared detectors and thermal imaging cameras.

get price

INDIUM [ADVANCE RELEASE] The Eye

2013-3-14  2011 came from the refining of lower grade imported indium metal and from the refining of scrap. Two refineries, one in In indium-based semiconductors, indium antimonide, indium arsenide, or indium phosphide can be used as the substrate, and several indium-containing compounds can be used as the epitaxial layer (or substrate coating), such

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四川维美可金属科技有限公司 matltech

Indium Antimonide (InSb) substrate is compound by high purity Indium and Antimony elements, mostly being used for meteorology civil applications. Polycrystalline and mono crystalline of InSb is available.

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Crystal Scientific

2016-6-15  Other materials such as indium antimonide, gallium arsenide and indium phosphide can be specified on request. Silicon offcuts After a crystal has been cut from an ingot the rest of the ingot is retained with the crystal planes marked so that they

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Гиредмет / Federal state research and design institute

units for vacuum thermal treatment and growing indium, gallium, thallium and other monocrystals ; units for zone refining of germanium, antimony, bismuth, etc . New developments “Redmet 90M” setup for growing silicon monocrystals having diameter

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